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In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

O'Brien, Nathan J. and Rouf, Polla and Samii, Rouzbeh and Ronnby, Karl and Buttera, Sydney C. and Hsu, Chih-Wei and Ivanov, Ivan G. and Kessler, Vadim and Ojamae, Lars and Pedersen, Henrik (2020). In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition. Chemistry of Materials. 32 , 4481-4489
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Abstract

Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking material for high frequency electronics. The difficulty of depositing high-quality crystalline InN currently impedes its broad implementation in electronic devices. Herein, we report a new highly volatile In(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial hexagonal InN by atomic layer deposition (ALD). The new In(III) precursor, the first example of a homoleptic triazenide used in a vapor deposition process, was easily synthesized and purified by sublimation. Thermogravimetric analysis showed single step volatilization with an onset temperature of 145 degrees C and negligible residual mass. Strikingly, two temperature intervals with self-limiting growth were observed when depositing InN films. In the high-temperature interval, the precursor underwent a gas-phase thermal decomposition inside the ALD reaction chamber to produce a more reactive In(III) compound while retaining self-limiting growth behavior. Density functional theory calculations revealed a unique two-step decomposition process, which liberates three molecules of each propene and N-2 to give a smaller tricoordinated In(III) species. Stoichiometric InN films with very low levels of impurities were grown epitaxially on 4H-SiC. The InN films deposited at 325 degrees C had a sheet resistivity of 920 Omega/sq. This new triazenide precursor enables ALD of InN for semiconductor applications and provides a new family of M-N bonded precursors for future deposition processes.

Authors/Creators:O'Brien, Nathan J. and Rouf, Polla and Samii, Rouzbeh and Ronnby, Karl and Buttera, Sydney C. and Hsu, Chih-Wei and Ivanov, Ivan G. and Kessler, Vadim and Ojamae, Lars and Pedersen, Henrik
Title:In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Year of publishing :2020
Volume:32
Page range:4481-4489
Number of Pages:9
Publisher:American Chemical Society
ISSN:0897-4756
Language:English
Publication Type:Journal article
Article category:Scientific peer reviewed
Version:Published version
Copyright:Creative Commons: Attribution 4.0
Full Text Status:Public
Subjects:(A) Swedish standard research categories 2011 > 1 Natural sciences > 104 Chemical Sciences > Materials Chemistry
URN:NBN:urn:nbn:se:slu:epsilon-p-106888
Permanent URL:
http://urn.kb.se/resolve?urn=urn:nbn:se:slu:epsilon-p-106888
Additional ID:
Type of IDID
DOI10.1021/acs.chemmater.9b05171
Web of Science (WoS)000541499600008
ID Code:17321
Faculty:NJ - Fakulteten för naturresurser och jordbruksvetenskap
Department:(NL, NJ) > Department of Molecular Sciences
Deposited By: SLUpub Connector
Deposited On:25 Aug 2020 11:41
Metadata Last Modified:25 Aug 2020 11:41

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