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Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Rouf, Polla and Samii, Rouzbeh and Ronnby, Karl and Bakhit, Babak and Buttera, Sydney C. and Martinovic, Ivan and Ojamae, Lars and Hsu, Chih-Wei and Palisaitis, Justinas and Kessler, Vadim and Pedersen, Henrik and O'Brien, Nathan J. (2021). Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition. Chemistry of Materials. 33 , 3266-3275
[Research article]

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Abstract

Gallium nitride (GaN) is the main component of modern-day high electron mobility transistors due to its favorable electronic properties. As electronic devices become smaller with more complex surface architecture, the ability to deposit high-quality GaN films at low temperatures is required. Herein, we report a new highly volatile Ga(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial GaN by atomic layer deposition (ALD). This new Ga(III) triazenide, the first hexacoordinated Ga-N bonded precursor used in a vapor deposition process, was easily synthesized and purified by either sublimation or recrystallisation. Thermogravimetric analysis showed single-step volatilization with an onset temperature of 155 degrees C and negligible residual mass. Three temperature intervals with self-limiting growth were observed when depositing GaN films. The GaN films grown in the second growth interval at 350 degrees C were epitaxial on 4H-SiC without an AlN seed layer and found to have a near stoichiometric Ga/N ratio with very low levels of impurities. In addition, electron microstructure analysis showed a smooth film surface and a sharp interface between the substrate and film. The band gap of these films was 3.41 eV with the Fermi level at 1.90 eV, showing that the GaN films were unintentionally n-type-doped. This new triazenide precursor enables ALD of GaN for semiconductor applications and provides a new Ga(III) precursor for future deposition processes.

Authors/Creators:Rouf, Polla and Samii, Rouzbeh and Ronnby, Karl and Bakhit, Babak and Buttera, Sydney C. and Martinovic, Ivan and Ojamae, Lars and Hsu, Chih-Wei and Palisaitis, Justinas and Kessler, Vadim and Pedersen, Henrik and O'Brien, Nathan J.
Title:Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition
Series Name/Journal:Chemistry of Materials
Year of publishing :2021
Volume:33
Page range:3266-3275
Number of Pages:10
Publisher:AMER CHEMICAL SOC
ISSN:0897-4756
Language:English
Publication Type:Research article
Article category:Scientific peer reviewed
Version:Published version
Copyright:Creative Commons: Attribution 4.0
Full Text Status:Public
Subjects:(A) Swedish standard research categories 2011 > 1 Natural sciences > 104 Chemical Sciences > Materials Chemistry
URN:NBN:urn:nbn:se:slu:epsilon-p-112452
Permanent URL:
http://urn.kb.se/resolve?urn=urn:nbn:se:slu:epsilon-p-112452
Additional ID:
Type of IDID
DOI10.1021/acs.chemmater.1c00244
Web of Science (WoS)000651524100023
ID Code:24667
Faculty:NJ - Fakulteten för naturresurser och jordbruksvetenskap
Department:(NL, NJ) > Department of Molecular Sciences
Deposited By: SLUpub Connector
Deposited On:23 Jun 2021 07:23
Metadata Last Modified:23 Jun 2021 07:31

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